High-power, high-efficiency, wavelength-stabilized broad area (BA) diode lasers are promising devices for industrial applications. They can be used, for example, for pumping narrow absorption bands in gain media of solid-state and fiber lasers as well as for power scaling by means of dense spectral beam combining. This thesis focuses on the analysis and mitigation of the factors limiting the efficiency of high-power distributed feedback (DFB) diode lasers. In particular, it will be shown how a power conversion efficiency in the 60 %-range can be achieved from 10 W-class 100 µm stripe DFB-BA lasers - values close to those of state-of-the-art Fabry-Pérot (FP) BA lasers. For the first time world-wide, newly developed DFB-BA lasers achieve 12 W continuous mode optical output power with 62 % peak power conversion efficiency and 58 % at 10 W, respectively. Wavelength stabilization is demonstrated from threshold to 15 A with a spectral width below 0.8 nm containing 95 % of the emitted power. The factors limiting the efficiency of DFB-BA lasers compared to state-of-the-art 10 W-class FP-BA lasers have been identified and as a result largely eliminated.

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Christoph Matthias Schultz, born in 1980, received his diploma degree in physics from the University of Hamburg in 2007. His research interests were focused on semiconductor physics, optoelectronics and physics of nanostructures. In his diploma thesis and scientific publications he reports on optical modes in self-assembled semiconductor micro tube resonators. From 2008 to 2012 Christoph Matthias Schultz joined the Ferdinand-Braun-Institut in Berlin, where his key research interests were in the development and simulation of high efficiency, high power diode lasers with monolithically integrated wavelength stabilization. Scientific and technological progress achieved during this period was presented in publications and on international conferences. A patent has been granted regarding the invention of a design and fabrication technique for high efficiency, wavelength stabilized diode lasers. His doctoral thesis concerns the analysis and mitigation of the factors limiting the efficiency of high power distributed feedback diode lasers. In 2013 he received the Dr. rer. nat. degree from the Technische Universität Berlin. In 2012 Christoph Matthias Schultz joined NXP Semiconductors, Test Center Europe in Hamburg, where he works in the field of wafer test innovation, design of qualification experiments and automated optical inspection.