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Insulated Gate Bipolar Transistor IGBT Theory and Design

Erschienen am 05.09.2003, 1. Auflage 2003
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Bibliografische Daten
ISBN/EAN: 9780471238454
Sprache: Englisch
Umfang: 648 S.
Einband: gebundenes Buch

Beschreibung

A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT. * Allinone resource * Explains the fundamentals of MOS and bipolar physics. * Covers IGBT operation, device and process design, power modules, and new IGBT structures.

Autorenportrait

VINOD KUMAR KHANNA, PhD, is a senior scientist working in the solid-state devices division of Central Electronics Engineering Research Institute in Pilani, India. He has been extensively involved for more than twenty years in device, process design and fabrication of power semiconductor devices. He received his PhD in Physics from Kurukshetra University in 1988. A Fellow of the Institution of Electronics and Telecommunication Engineers and a lifetime member of several scientific and professional organizations, Dr. Khanna has published over thirty research papers in international journals and conference proceedings and written two previous books entitled, Handbook of Electrical & Electronics Engineering Fundamentals, and Digital Signal Processing, Telecommunications & Multimedia Technology.